unisonic technologies co., ltd mmbt5401 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2008 unisonic technologies co., ltd qw-r206-011.f high voltage switching transistor ? features *collector-emitter voltage: v ceo =-150v *high current gain lead-free: mmbt5401l halogen-free: mmbt5401g ? ordering information ordering number pin assignment normal lead free plating halogen-free package 1 2 3 packing mmbt5401-x-ae3-r mmbt5401l-x-ae3-r mmbt5401g-x-ae3-r sot-23 e b c tape reel ? marking 2l. lead plating
mmbt5401 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-011.f ? absoluate maxium ratings (ta = 25 ) parameter symbol ratings unit collector -base voltage v cbo -160 v collector -emitter voltage v ceo -150 v emitter -base voltage v ebo -5 v dc collector current i c -600 ma power dissipation p d 350 mw junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta= 25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -160 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0 -150 v emitter-base breakdown voltage bv ebo i e =-10 a, i c =0 -6 v collector cut-off current i cbo v cb =-120v, i e =0 -50 na emitter cut-off current i ebo v be =-3v, ic=0 -50 na dc current gain(note) h fe v ce =-5v, ic=-1ma v ce =-5v, ic=-10ma v ce =-5v, ic=-50ma 80 160 400 collector-emitter satu ration voltage v ce(sat) i c =-10ma, i b =-1ma i c =-50ma, i b =-5ma -0.2 -0.5 v base-emitter satura tion voltage v be(sat) i c =-10ma, i b =-1ma i c =-50ma, i b =-5ma -1 -1 v current gain bandwidth product f t v ce =-10v, ic=-10ma, f=100mhz 100 300 mhz output capacitance c ob v cb =-10v, i e =0, f=1mhz 6.0 pf noise figure nf i c =-0.25ma, v ce =-5v r s =1k , f=10hz ~ 15.7khz 8 db note: pulse test: pw<300 s, duty cycle<2% ? classification of h fe rank a b c range 80-170 150-240 200-400
mmbt5401 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-011.f typical characterics fig.2 dc current gain collector current, ic (ma) dc current gain, h fe 10 2 10 1 10 0 10 3 -10 3 -10 2 -10 1 -10 0 -10 -1 v ce =-5v fig.3 base-emitter on voltage collector current, ic (ma) base-emitter voltage, v be (v) 0 -0.2 -0.4 -0.6 -0.8 -1.0 v ce =-5v saturation voltage, v be(sat) v ce(sat) (v) fig.4 saturation voltage fig.5 current gain-bandwidth product fig.1 collector output capacitance v ce (sat) v be (sat) ic=10*i b 10 3 current gain-bandwidth product, f t (mhz) 10 0 10 1 10 2 v ce =-10v collector-base voltage, v cb (v) capacitance, cob (pf) -10 0 0 4 8 12 f=1mhz i e =0 -10 -1 -10 -2 -10 1 -10 2 16 20 -10 1 -10 2 -10 3 -10 0 collector current, ic (ma) -10 3 -10 2 -10 1 -10 0 -10 -1 collector current, ic (ma) -10 3 -10 2 -10 1 -10 0 -10 -1 -10 0 -10 1
mmbt5401 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-011.f utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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